Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness

Product Details
Application: LED
Conductivity Type: P-Type
Purity: MG-Si
Gold Member Since 2018

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  • Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
  • Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
  • Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
  • Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
  • Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
  • Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
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  • Overview
  • Product Description
  • Detailed Photos
  • Related products we can supply
  • processing
  • Equipments
  • Product Parameters
Overview

Basic Info.

Model NO.
FW-CRYSTAL
Type
Intrinsic Semiconductor
Growth Method
CZ and Fz
Orientation
111 or 100
Resistivity
0.0005 to 150
Surface
Double Side Polished or Single Side Polished
Dopant
N Type and P Type
Particles
<30 at 0.3um
Bow
< 30 Um
Ttv
<15 Um
Manufacturing Technology
Optoelectronic Semiconductor
Material
Compound Semiconductor
Package
SMD
Signal Processing
Analog Digital Composite and Function
Transport Package
Box
Specification
customized
Trademark
Finewin
Origin
China
Production Capacity
100, 000PCS/Month

Product Description

 Silicon wafer (single side polished), P-type, 3 inch diameter and 0.5 mm thickness


Product Description


The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material. The oxidation process includes high temperature dry oxygen oxidation and high temperature wet oxygen oxidation.
Detailed Photos


Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm ThicknessSilicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness
Related products we can supply

Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm ThicknessSilicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness

processing


Growing a silicon ingot can take anywhere from one week to one month, depending on many factors, including size, quality and the specification. More than 75% of all single crystal silicon wafers grow via the Czochralski (CZ) method. 

Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness

Equipments
 



Silicon Wafer (single side polished) P-Type, 3 Inch Diameter and 0.5 mm Thickness

Product Parameters
 
Growth Method CZ
Type(doping) P-type (B doped) or Ntype (P doped)
Orientation (100) or (111)
Diameter 2inch~12inch
Thickness 200~1500 μm,
Surface SSP or DSP
TTV&BOW '≤15 μm
Resistivity 0~300ohm.cm
Cleaning/ packaging Vacuum packaging, 25 pieces in one cassette packaging
Stock situation your required specification can be sent to us for checking


5.FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
 



 

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