Application: | Diode |
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Batch Number: | 2023+ |
Material: | 99.996% Monocrystalline |
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Crystal materials | 99, 996% of Al2O3, High Purity, Monocrystalline |
Crystal quality | Block marks, twins, Color, micro-bubbles and dispersal centers are non-existent |
Diameter | 50.8±0.2mm 76.2±0.2mm 100.0±0.3mm 150.0±0.3mm |
Thickness | 430±15 μ m, 500±15 μ m, 550±15 μm, 650±15 μm,1000±15 μm |
Orientation | C-plane, M-plane, A-plane, R-plane, C-plane off M-plane, C-plane off A-plane |
Primary flat Orientation | A-plane (1 1-2 0) ± 0.2° |
Primary flat length | 16.0±1.5 mm, 32.50±1.5 mm, |
TTV | ≤ 10 μm |
LTV | ≤ 10 μm |
BOW | ≤ 10 μm |
Warp | ≤ 10 μm |
Front Surface Back Surface |
Epi-polished, Ra< 0.2nm (By AFM) Fine ground (Ra=0.5 to 1.2 μ M) or Epi-polished (Ra< 0.2 nm) |
Cleaning/packaging | Class 100 clean room cleaning, vacuum packaging; 25 pieces in one cassette packaging or individual packaging. |
Application: Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GaN for LED's
A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.