4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um

Product Details
Application: LED
Conductivity Type: N-Type
Purity: EG-Si
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  • 4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
  • 4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
  • 4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
  • 4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
  • 4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
  • 4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
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  • Overview
  • Product Description
  • Related products we can supply
  • processing
  • Equipments
  • Product Parameters
Overview

Basic Info.

Model NO.
FW-Silicon
Type
Monocrystalline Silicon
Growth Method
CZ and Fz
Orientation
111 or 100
Resistivity
0.0005 to 150
Surface
Double Side Polished or Single Side Polished
Dopant
N Type and P Type
Particles
<30 at 0.3um
Bow
< 30 Um
Ttv
<15 Um
Manufacturing Technology
Optoelectronic Semiconductor
Material
Compound Semiconductor
Package
SMD
Signal Processing
Analog Digital Composite and Function
Transport Package
Box
Specification
costomized
Trademark
Finewin
Origin
Jiaozuo Henan
Production Capacity
100, 000PCS/Month

Packaging & Delivery

Package Size
25.00cm * 44.00cm * 13.00cm
Package Gross Weight
3.000kg

Product Description

4inch prime SiO2 wafers with oxide layer 2um, 500nm silicon thickness 525um

 
Product Description

 what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material. The oxidation process includes high temperature dry oxygen oxidation and high temperature wet oxygen oxidation.
4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um
Related products we can supply
 

4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um

processing


2. Manufacturing a Silicon Wafer
Growing a silicon ingot can take anywhere from one week to one month, depending on many factors, including size, quality and the specification. More than 75% of all single crystal silicon wafers grow via the Czochralski (CZ) method. 

4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um

Equipments


4inch Prime Sio2 Wafers with Oxide Layer 2um, 500nm Silicon Thickness 525um

Product Parameters
 
Grow method CZ or FZ
Diameter 1 to 8 inch
Finish As cut, lapped, etched, SSP, DSP
Orientation (100) (111) (110)
Type N or P
Resistivity CZ: From 0.0005 to 150 Ωcm
FZ: Up to 10 kΩcm

Oxide situation

according to customers' requirement

5.FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
 



 

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