After-sales Service: | After-Sale Service |
---|---|
Warranty: | 12 |
Material: | 99.996% Monocrystalline |
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4 inch single/double sided polished N-Type Si dopant Gallium Arsenide wafer LD/LED applications
hncrystal.en.made-in-china.com
Parameter | Guaranteed / Actual Values | UOM | |
Growth Method: | VGF | ||
Conduct Type: | S-I-N | ||
Dopant: | Undoped | ||
Diameter: | 50.7± 0.1 | mm | |
Orientation: | (100)± 0.50 | ||
OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | ||
IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | ||
Resistivity: | Min: 1.0 E8 | Max: 2.2 E8 | Ω·cm |
Mobility: | Min: 4500 | Max: 5482 | cm2/v.s |
EPD: | Min: 700 | Max: 800 | / cm2 |
Thickness: | 350± 20 | µm | |
Edge Rounding: | 0.25 | mmR | |
Laser Marking: | N/A | ||
TTV/TIR: | Max: 10 | µm | |
BOW: | Max: 10 | µm | |
Warp: | Max: 10 | µm | |
Partical Count: | <50/wafer(for particle>0.3um) | ||
Surface Finish- front: | Polished | ||
Surface Finish -back: | Etched | ||
Epi-Ready: |
Yes |
Parameter | Guaranteed / Actual Values | UOM | |
Growth Method: | VGF | ||
Conduct Type: | S-I-N | ||
Dopant: | Undoped | ||
Diameter: | 76.2± 0.2 | mm | |
Orientation: | (100) 00± 0.50 | ||
OF location/length: | EJ [ 0-1-1]± 0.50/22±2 | ||
IF location/length: | EJ [ 0-1 1 ]± 0.50/11±2 | ||
Resistivity: | Min: 1E8 | Max: 1.03E8 | Ω·cm |
Mobility: | Min: 5613 | Max: 6000 | cm2/v.s |
EPD: | Min: 700 | Max: 800 | Max: |
Thickness: | 625±20 | µm | |
Edge Rounding: | 0.375 | mmR | |
Laser Marking: | N/A | ||
TTV: | N/A | µm | |
Surface Finish- front: | Polished | ||
Surface Finish -back: | Etched | ||
Epi-Ready: |
Yes |
Parameter | Guaranteed / Actual Values | UOM | |
Growth Method: | VGF | ||
Conduct Type: | S-I-N | ||
Dopant: | Undoped | ||
Diameter: | 100.0± 0.2 | mm | |
Orientation: | (100)± 0.30 | ||
OF location/length: | EJ [ 0-1-1]± 0.50/32.5±1 | ||
IF location/length: | EJ [ 0-1 1 ]± 0.50/18±1 | ||
Resistivity: | Min: 1.5 E8 | Max: 2.0 E8 | Ω·cm |
Mobility: | Min: 4832 | Max: 4979 | cm2/v.s |
EPD: | Min: 600 | Max: 700 | / cm2 |
Thickness: | 625± 25 | µm | |
Edge Rounding: | 0.375 | mmR | |
TTV/TIR: | Max: 3 | µm | |
BOW: | Max: 4 | µm | |
Warp: | Max: 5 | µm | |
Partical Count: | <100/wafer(for particle>0.3um) | ||
Surface Finish- front: | Polished | ||
Surface Finish -back: | Polished | ||
Epi-Ready: |
Yes |
Parameter | Customer's Requirements | Guaranteed / Actual Values | UOM | ||
Growth Method: | VGF | VGF | |||
Conduct Type: | S-C-P | S-C-P | |||
Dopant: | GaAs-Zn | GaAs-Zn | |||
Diameter: | 50.8± 0.4 | 50.8± 0.4 | mm | ||
Orientation: | (100)± 0.50 | (100)± 0.50 | |||
OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | EJ [ 0-1-1]± 0.50/16±1 | |||
IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | EJ [ 0-1 1 ]± 0.50/7±1 | |||
Ingot CC: | Min: 1 E19 | Max: 5 E19 | Min: 1.4 E19 | Max: 1.9 E19 | /cm3 |
Resistivity: | Min: N/A | Max: N/A | Min: N/A | Max: N/A | Ω·cm |
Mobility: | Min: N/A | Max: N/A | Min: N/A | Max: N/A | cm2/v.s |
EPD: | Max: 5000 | Min: 600 | Max: 700 | / cm2 | |
Thickness: | 350±25 | 350±25 | µm | ||
Surface Finish- front: | Polished | Polished | |||
Surface Finish -back: | Etched | Etched | |||
Epi-Ready: |
Yes |
Yes |
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Q: How to pay?
A: T/T, Paypal, etc
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-25pcs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.
Q: Do you have standard products?
A: Our standard products in stock.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.