Materials: | Gallium Nitride Substrates |
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Thickness: | 350um |
Size: | 2inch to 4 Inch |
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XRD-FWHM | 002 | 102 |
350μm FSGaN | 25-45 | 20-55 |
Item | GaN-FS-C-U-C50 | GaN-FS-C-N-C50 | GaN-FS-C-SI-C50 |
Dimensions | Ф 50.8 mm ± 1 mm | ||
Thickness | 350 ± 25 µm | ||
Useable Surface Area | > 90% | ||
Orientation | C-plane (0001) off angle toward M-Axis 0.35°± 0.15° | ||
Orientation Flat | (1-100) ± 0.5°, 16.0 ± 1.0 mm | ||
Secondary Orientation Flat | (11-20) ± 3°, 8.0 ± 1.0 mm | ||
TTV (Total Thickness Variation) |
≤ 15 µm | ||
BOW | ≤ 20 µm | ||
Conduction Type | N-type (Undoped) |
N-type (Ge-doped) |
Semi-Insulating (Fe-doped) |
Resistivity(300K | < 0.5 Ω·cm | < 0.05 Ω·cm | >106 Ω·cm |
Dislocation Density | 1~9x105 cm-2 | 5x105 cm-2 ~3x106 cm-2 |
1~9x105 cm-2 |
1~3x106 cm-2 | 1~3x106 cm-2 | ||
Polishing | Front Surface: Ra < 0.2 nm. Epi-ready polished Back Surface: Fine ground |
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Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |