Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing

Product Details
Materials: Gallium Nitride Substrates
Thickness: 350um
Size: 2inch to 4 Inch
Gold Member Since 2018

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

  • Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
  • Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
  • Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
  • Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
  • Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
  • Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
Find Similar Products

Basic Info.

Model NO.
FW-sapphire
Manufacturing Technology
Optoelectronic Semiconductor
Material
Compound Semiconductor
Type
N-type Semiconductor
Application
Television
Brand
Finewin
Transport Package
Box
Specification
2INCH
Trademark
FineWin
Origin
China
Production Capacity
1000 PCS/Month

Product Description

HVPE Gallium Nitride GaN Wafer , Gan Chip Free Standing 10 x 10 mm Size

1. What is GaN substrates
Gallium Nitride is one kind of wide-gap compound semiconductors. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years.

2.Application
Laser diodes for Blu-ray Disc players and light projectors
Future application: GaN PN-diode with high breakdown voltage over 3,000V and low on-resistance of 1mΩ·cm2
long-lived, efficient and reliable optoelectronic and electronic devices
high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.

3.Product available

2"GaN substrates 
small pieces (10*10.5mm) for your testing usage
GaN-template with highly doped n-type layer (n=<1e19/cm3)
Ntype (undoped), Ntype (Ge doped), and Semi-insulating(Fe doped) substrates are available
Non-polar and semi-polar GaN substrates



4. Features
 high crystalline, good uniformity, and superior surface quality
XRD-FWHM 002 102
350μm FSGaN 25-45 20-55
Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
5. Specification
 Item GaN-FS-C-U-C50 GaN-FS-C-N-C50 GaN-FS-C-SI-C50
Dimensions Ф 50.8 mm ± 1 mm
Thickness 350 ± 25 µm
Useable Surface Area > 90%
Orientation C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0 mm
TTV
(Total Thickness Variation)
≤ 15 µm
BOW ≤ 20 µm
Conduction Type N-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K < 0.5 Ω·cm < 0.05 Ω·cm >106 Ω·cm
Dislocation Density 1~9x105 cm-2 5x105 cm-2
~3x106 cm-2
1~9x105 cm-2
1~3x106 cm-2 1~3x106 cm-2
Polishing Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

6. Pictures
Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing

Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing
Hvpe Gallium Nitride GaN Wafer, GaN Chip Free Standing

 

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier