Gallium Nitride GaN Substrates for III-Nitride Devices

Product Details
Materials: Gallium Nitride Substrates
Thickness: 350um
Size: 2inch to 4 Inch
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  • Gallium Nitride GaN Substrates for III-Nitride Devices
  • Gallium Nitride GaN Substrates for III-Nitride Devices
  • Gallium Nitride GaN Substrates for III-Nitride Devices
  • Gallium Nitride GaN Substrates for III-Nitride Devices
  • Gallium Nitride GaN Substrates for III-Nitride Devices
  • Gallium Nitride GaN Substrates for III-Nitride Devices
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Basic Info.

Model NO.
FW-GaN
Manufacturing Technology
Optoelectronic Semiconductor
Material
Compound Semiconductor
Type
N-type Semiconductor
Application
Television
Brand
Finewin
Transport Package
Box
Specification
2INCH
Trademark
FineWin
Origin
Jiaozuo City Henan Province
Production Capacity
1000 PCS/Month

Product Description

GaN Substrates for III-Nitride Devices

1. What is GaN substrates
Gallium Nitride is one kind of wide-gap compound semiconductors. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years.

2.Application
Laser diodes for Blu-ray Disc players and light projectors
Future application: GaN PN-diode with high breakdown voltage over 3,000V and low on-resistance of 1mΩ·cm2
long-lived, efficient and reliable optoelectronic and electronic devices
high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.

3.Product available

2"GaN substrates 
small pieces (10*10.5mm) for your testing usage
GaN-template with highly doped n-type layer (n=<1e19/cm3)
Ntype (undoped), Ntype (Ge doped), and Semi-insulating(Fe doped) substrates are available
Non-polar and semi-polar GaN substrates



4. Features
 high crystalline, good uniformity, and superior surface quality
XRD-FWHM 002 102
350μm FSGaN 25-45 20-55
Gallium Nitride GaN Substrates for III-Nitride Devices
5. Specification
 Item GaN-FS-C-U-C50 GaN-FS-C-N-C50 GaN-FS-C-SI-C50
Dimensions Ф 50.8 mm ± 1 mm
Thickness 350 ± 25 µm
Useable Surface Area > 90%
Orientation C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0 mm
TTV
(Total Thickness Variation)
≤ 15 µm
BOW ≤ 20 µm
Conduction Type N-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K < 0.5 Ω·cm < 0.05 Ω·cm >106 Ω·cm
Dislocation Density 1~9x105 cm-2 5x105 cm-2
~3x106 cm-2
1~9x105 cm-2
1~3x106 cm-2 1~3x106 cm-2
Polishing Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

6. Pictures
Gallium Nitride GaN Substrates for III-Nitride Devices

Overseas exhibition
Gallium Nitride GaN Substrates for III-Nitride DevicesGallium Nitride GaN Substrates for III-Nitride Devices
5.FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.


 

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