GaN Template Wafers Substrate for High-Power Device

• Materials: Gallium Nitride
• Thickness: 3-4um or 20um
• Size: 2inch or 4inch
• Model NO.: FW-CRYSTAL
• Manufacturing Technology: Optoelectronic Semiconductor
• Material: Compound Semiconductor
• Type: N-type Semiconductor
• Package: SMD
• Application: Television
• Brand: Finewin
• Transport Package: Box
• Specification: 2INCH
• Trademark: FineWin
• Origin: Jiaozuo City Henan Province
• Production Capacity: 1000 PCS/Month

Product Description

GaN Template Wafers

1. What is templates
We use the term "template" to describe our products as they are different to substrates. Specifically, a template is a composite or engineered substrate, where one or more layers are added to the original susbstrate.

2.Application
 
Blue and white LED for room lightings, displays and general use

GaN power switching devices

3.Product available

2" to 4" GaN-templates on FSS and PSS
Thick GaN-templates (t=3~20μm)
GaN-template with highly doped n-type layer (n=<1e19/cm³)
Ntype (undoped), Ntype (Si doped), and Ptype(Mg doped) templates are available
GaN Templates on both sapphire substres and Silicon substrates

4. Features

XRD-FWHM	002	102
3-4μm GaN/Sapphire	200-300	250-450

 Dislocation density:3.5E+08 cm-2



5. Specification
2inch specification

Item	GaN-FS-C-U-C50	GaN-FS-C-N-C50	GaN-FS-C-SI-C50
Dimensions	Ф 50.8 mm ± 1 mm
Thickness	350 ± 25 µm
Useable Surface Area	> 90%
Orientation	C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat	(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat	(11-20) ± 3°, 8.0 ± 1.0 mm
Total Thickness Variation	≤ 15 µm
BOW	≤ 20 µm
Conduction Type	N-type (Undoped)	N-type (Ge-doped)	Semi-Insulating (Fe-doped)
Resistivity(300K)	< 0.5 Ω·cm	< 0.05 Ω·cm	>106 Ω·cm
Dislocation Density	1~9x105 cm-2	5x105 cm-2 ~3x106 cm-2	1~9x105 cm-2
	1~3x106 cm-2		1~3x106 cm-2
Polishing	Front Surface: Ra < 0.2 nm. Epi-ready polished Back Surface: Fine ground
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

4inch specification

Item	GaN-T-C-U-C100	GaN-T-C-N-C100
Dimensions	Ф 100 mm ± 0.1 mm
Thickness	4 µm, 20 µm
Orientation	C-plane(0001) ± 0.5°
Conduction Type	N-type (Undoped)	N-type (Si-doped)
Resistivity 300K	< 0.5 Ω·cm	< 0.05 Ω·cm
Carrier Concentration	< 5x1017 cm-3	> 1x1018 cm-3
Mobility	~ 300cm2/V·s	~ 200 cm2/V·s
Dislocation Density	Less than 5x108 cm-2
Substrate structure	GaN on Sapphire(Standard: SSP Option: DSP)
Useable Surface Area	> 90%
Package	Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

6. Product pictures