| Application: | Integrated Circuit |
|---|---|
| Conductivity Type: | P-Type |
| Purity: | EG-Si |
|
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Phosphorus detection Silicon seed crystal
Size:
• 5 mm x 5 mm x 70 mm
• 5 mm x 5 mm x 100 mm
• 6 mm x 6 mm x 100 mm
Resistivity: greater than 200 ohm · cm
Production method: FZ (floating zone method)
Doping element: Phosphorus (P)
Crystal direction: 111
Phosphorus-doped (P-doped) seed crystals are a technique used in the growth of semiconductor materials, especially silicon crystals. During the growth of silicon crystals, the electrical properties of silicon can be changed from an intrinsic semiconductor to an N-type semiconductor by adding phosphorus atoms to the silicon.
The basic principle of phosphorus doped seed crystal
Doping: In semiconductor manufacturing, doping is the process of introducing a small number of impurity atoms into a pure semiconductor material for the purpose of changing the material's electrical conductivity. As a pentavalent element, when incorporated into a quaternary silicon lattice, the phosphorus atom will have an extra electron, which can move freely, increasing the conductivity of the material.
N-type semiconductor: Silicon crystals doped with phosphorus are N-type semiconductors because the extra free electrons become the main charge carrier.
Application of phosphorus doped seed crystal
• Electronic device manufacturing: phosphorus-doped silicon crystals are the basic material for manufacturing various electronic devices (such as transistors, diodes, integrated circuits, etc.).
• Solar cells: In the manufacture of solar cells, phosphorus-doped silicon is also widely used to improve the efficiency and performance of cells.
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