• 4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
  • 4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
  • 4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
  • 4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
  • 4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
  • 4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications

4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications

After-sales Service: After-Sale Service
Warranty: 12
Material: 99.996% Monocrystalline
Surface Treatment: Ssp or DSP
Growth Method: Ky
Orientation: C Plane

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  • Overview
  • Product Description
  • Product Parameters
Overview

Basic Info.

Model NO.
FW-CRYSTAL
Thickness
430um
Transport Package
Single Piece or 25 PCS
Specification
2inch Cplane
Trademark
FineWin
Origin
China
Production Capacity
60, 000 PCS/Month

Product Description

4 inch single/double sided polished Undoped Gallium Arsenide wafer Microelectronics applications

What we can supply:

GaAs wafers: Monocrystal ingots:2-6inch
orientation: (100)(111)
Type: Ntype Doped silicon, P type, doped Zn, Si undoped
Product Description
Product Parameters

 

Parameter Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 50.7± 0.1 mm
Orientation: (100)± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/16±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1  
Resistivity: Min: 1.0 E8 Max: 2.2 E8 Ω·cm
Mobility: Min: 4500 Max: 5482 cm2/v.s
EPD: Min: 700 Max: 800 / cm2
Thickness: 350± 20 µm
Edge Rounding: 0.25 mmR
Laser Marking: N/A  
TTV/TIR: Max: 10 µm
BOW: Max: 10 µm
Warp: Max: 10 µm
Partical  Count: <50/wafer(for particle>0.3um)  
Surface Finish- front: Polished    
Surface Finish -back: Etched  
Epi-Ready:

Yes

 
 
Parameter Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 76.2± 0.2 mm
Orientation: (100) 00± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/22±2  
IF location/length: EJ [ 0-1 1 ]± 0.50/11±2  
Resistivity: Min: 1E8 Max: 1.03E8 Ω·cm
Mobility: Min: 5613 Max: 6000 cm2/v.s
EPD: Min: 700 Max: 800 Max:
Thickness: 625±20 µm
Edge Rounding: 0.375 mmR
Laser Marking: N/A  
TTV: N/A µm
Surface Finish- front: Polished    
Surface Finish -back: Etched  
Epi-Ready:

Yes


 
 
Parameter Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 100.0± 0.2 mm
Orientation: (100)± 0.30  
OF location/length: EJ [ 0-1-1]± 0.50/32.5±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/18±1  
Resistivity: Min: 1.5 E8 Max: 2.0 E8 Ω·cm
Mobility: Min: 4832 Max: 4979 cm2/v.s
EPD: Min: 600 Max: 700 / cm2
Thickness: 625± 25 µm
Edge Rounding: 0.375 mmR
TTV/TIR: Max: 3 µm
BOW: Max: 4 µm
Warp: Max: 5 µm
Partical  Count: <100/wafer(for particle>0.3um)  
Surface Finish- front: Polished    
Surface Finish -back: Polished  
Epi-Ready:

Yes

 
 
Parameter Customer's Requirements Guaranteed / Actual Values UOM
Growth Method: VGF VGF  
Conduct Type: S-C-P S-C-P  
Dopant: GaAs-Zn GaAs-Zn  
Diameter: 50.8± 0.4 50.8± 0.4 mm
Orientation: (100)± 0.50 (100)± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/16±1 EJ [ 0-1-1]± 0.50/16±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1 EJ [ 0-1 1 ]± 0.50/7±1  
Ingot CC: Min: 1 E19 Max: 5 E19 Min: 1.4 E19 Max: 1.9 E19 /cm3
Resistivity: Min: N/A Max: N/A Min: N/A Max: N/A Ω·cm
Mobility: Min: N/A Max: N/A Min: N/A Max: N/A cm2/v.s
EPD: Max: 5000 Min: 600 Max: 700 / cm2
Thickness: 350±25 350±25 µm
Surface Finish- front: Polished   Polished    
Surface Finish -back: Etched Etched  
Epi-Ready:

Yes

Yes

 

Product Pictures:

4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications



Package:
Cleaning in class 100 roon, and then 25pcs packed in a cassette. Then we pack all your required wafers in the box well. 
4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications

Our Exhibition:
4 Inch Single/Double Sided Polished Undoped Gallium Arsenide Wafer Microelectronics Applications
FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
 




 

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