• Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
  • Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
  • Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
  • Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
  • Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
  • Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices

Custom 4-6 "GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices

Manufacturing Technology: Optoelectronic Semiconductor
Material: Compound Semiconductor
Type: Intrinsic Semiconductor
Package: SMD
Signal Processing: Analog Digital Composite and Function
Application: LED
Gold Member Since 2018

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Rating: 5.0/5
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Basic Info.

Model NO.
FW-LN
Model
1324
Batch Number
Polished
Brand
Finewen
Growth Method
CZ and Fz
Orientation
111 or 100
Resistivity
0.0005 to 150
Surface
Double Side Polished or Single Side Polished
Dopant
N Type and P Type
Particles
<30 at 0.3um
Bow
< 30 Um
Ttv
<15 Um
Transport Package
Box
Specification
customized size
Trademark
FW-Wafers
Origin
Jiaozuo Henan
Production Capacity
100, 000PCS/Month

Product Description

Custom 4-6 "Gan-on-Si silicon based GaN epitaxial wafers for vertical power devices 


1. what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which is used as an insulation or mask material. The oxidation process includes high temperature dry oxygen oxidation and high temperature wet oxygen oxidation.
Custom 4-6 &quot;GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power DevicesCustom 4-6 &quot;GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
2.Product discriptio
Product Name
CZ and FZ Polished silicon Wafer
Material
Silicon
Diameter 
150mm
Surface finish
SSP
Orientation
NO Request
Grade
None
Type
None
Resistivity
None
Thickness
2500um
3. Manufacturing a Silicon Wafer
Growing a silicon ingot can take anywhere from one week to one month, depending on many factors, including size, quality and the specification. More than 75% of all single crystal silicon wafers grow via the Czochralski (CZ) method. 

Custom 4-6 &quot;GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices

4.Equipment we use

Custom 4-6 &quot;GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices

5.Spcifications(related products we can supply)
Custom 4-6 &quot;GaN-on-Si Silicon Based GaN Epitaxial Wafers for Vertical Power Devices
6.FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
 



 

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