GaN Substrates for III-Nitride Devices

• Manufacturing Technology: Optoelectronic Semiconductor
• Material: Compound Semiconductor
• Type: N-type Semiconductor
• Package: CSP
• Application: Television
• Brand: Finewin
• Model NO.: FW-GaN
• Materials: Gallium Nitride Substrates
• Thickness: 350um
• Size: 2inch to 4 Inch
• Shape: Round
• Color: Colorless
• Transport Package: Box
• Specification: 2INCH
• Trademark: FineWin
• Origin: Jiaozuo City Henan Province
• HS Code: 38180090
• Production Capacity: 1000 PCS/Month

Product Description

GaN Substrates for III-Nitride Devices

Product Description

1. What is GaN substrates

Gallium Nitride is one kind of wide-gap compound semiconductors. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years.

2.Product available

2"GaN substrates 
small pieces (10*10.5mm) for your testing usage
GaN-template with highly doped n-type layer (n=<1e19/cm³)
Ntype (undoped), Ntype (Ge doped), and Semi-insulating(Fe doped) substrates are available
Non-polar and semi-polar GaN substrates

3. Features
 high crystalline, good uniformity, and superior surface quality

XRD-FWHM	002	102
350μm FSGaN	25-45	20-55

Products application

Laser diodes for Blu-ray Disc^™ players and light projectors

Future application: GaN PN-diode with high breakdown voltage over 3,000V and low on-resistance of 1mΩ·cm²
long-lived, efficient and reliable optoelectronic and electronic devices
high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.

 

Product Parameters

 Specification

Item	GaN-FS-C-U-C50	GaN-FS-C-N-C50	GaN-FS-C-SI-C50
Dimensions	Ф 50.8 mm ± 1 mm
Thickness	350 ± 25 µm
Useable Surface Area	> 90%
Orientation	C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat	(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat	(11-20) ± 3°, 8.0 ± 1.0 mm
TTV (Total Thickness Variation)	≤ 15 µm
BOW	≤ 20 µm
Conduction Type	N-type (Undoped)	N-type (Ge-doped)	Semi-Insulating (Fe-doped)
Resistivity(300K	< 0.5 Ω·cm	< 0.05 Ω·cm	>106 Ω·cm
Dislocation Density	1~9x105 cm-2	5x105 cm-2 ~3x106 cm-2	1~9x105 cm-2
	1~3x106 cm-2		1~3x106 cm-2
Polishing	Front Surface: Ra < 0.2 nm. Epi-ready polished Back Surface: Fine ground
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

Detailed Photos

 

 

Company Profile

 

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.