Henan, China
Business Type:
Trading Company
Business Range:
Electrical & Electronics, Instruments & Meters, Light Industry & Daily Use, Lights & ...
Number of Employees:
2
Year of Establishment:
2017-01-22
Average Lead Time:
Peak season lead time: within 15 workdays
Off season lead time: within 15 workdays
Sample Available

GaN Wafers, GaN Substrates, Bulk GaN manufacturer / supplier in China, offering Free-Standing GaN Substrates, Quality Supplier 2in 4in 6in 8in Semiconductors Polishing Silicon Wafer, Factory Directly Wholesale Polished Semiconductor Silicon Wafer and so on.

Gold Member Since 2018
Audited Supplier

Free-Standing GaN Substrates

Min. Order / Reference FOB Price
1 Piece US $1-100/ Piece
Port: Beijing, China
Production Capacity: 1000 PCS/Month
Payment Terms: T/T, Western Union, Paypal
Manufacturing Technology: Optoelectronic Semiconductor
Material: Compound Semiconductor
Type: N-type Semiconductor
Application: Television
Brand: Finewin
Materials: Gallium Nitride Substrates

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Basic Info.

Thickness
350um
Size
2inch to 4 Inch
Trademark
FineWin
Transport Package
Box
Specification
2INCH
Origin
Jiaozuo City Henan Province
Free-Standing GaN Substrates

1. What is GaN substrates
Gallium Nitride is one kind of wide-gap compound semiconductors. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years.

2.Application
 
Laser diodes for Blu-ray Disc players and light projectors
Future application: GaN PN-diode with high breakdown voltage over 3,000V and low on-resistance of 1mΩ·cm2
long-lived, efficient and reliable optoelectronic and electronic devices
high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.

3.Product available

2"GaN substrates 
small pieces (10*10.5mm) for your testing usage
GaN-template with highly doped n-type layer (n=<1e19/cm3)
Ntype (undoped), Ntype (Ge doped), and Semi-insulating(Fe doped) substrates are available
Non-polar and semi-polar GaN substrates



4. Features
 high crystalline, good uniformity, and superior surface quality
XRD-FWHM002102
350μm FSGaN25-4520-55
Free-Standing GaN Substrates
5. Specification
 ItemGaN-FS-C-U-C50GaN-FS-C-N-C50GaN-FS-C-SI-C50
DimensionsФ 50.8 mm ± 1 mm
Thickness350 ± 25 µm
Useable Surface Area> 90%
OrientationC-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat(11-20) ± 3°, 8.0 ± 1.0 mm
TTV
(Total Thickness Variation)
≤ 15 µm
BOW≤ 20 µm
Conduction TypeN-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K< 0.5 Ω·cm< 0.05 Ω·cm>106 Ω·cm
Dislocation Density1~9x105 cm-25x105 cm-2
~3x106 cm-2
1~9x105 cm-2
1~3x106 cm-21~3x106 cm-2
PolishingFront Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

6. Pictures
Free-Standing GaN Substrates



 

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