GaAs (Gallium Arsenide) Wafer Substrate

Product Details
After-sales Service: After-Sale Service
Warranty: 12
Usage: Optical
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  • GaAs (Gallium Arsenide) Wafer Substrate
  • GaAs (Gallium Arsenide) Wafer Substrate
  • GaAs (Gallium Arsenide) Wafer Substrate
  • GaAs (Gallium Arsenide) Wafer Substrate
  • GaAs (Gallium Arsenide) Wafer Substrate
  • GaAs (Gallium Arsenide) Wafer Substrate
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  • Overview
  • Product Parameters
  • Detailed Photos
Overview

Basic Info.

Model NO.
FW-CRYSTAL
Type
Flat Lens
Transmittance
>95%
Shape
Single-lens
Material
Optical Glass
Lenses Color
Clear
Customized
Customized
Coating
UV
Size
Customized
Thickness
Customized
Growth Method
Ky
Transport Package
Box
Specification
customized
Trademark
FineWin
Origin
China
Production Capacity
60000 PCS/Month

Product Description

GaAs(Gallium Arsenide)Wafer

 
What we can supply:

GaAs wafers: Monocrystal ingots:2-6inch
orientation: (100)(111)
Type: Ntype Doped silicon, P type, doped Zn, Si undoped

 

Product Parameters

 

Parameter Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 76.2± 0.2 mm
Orientation: (100) 00± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/22±2  
IF location/length: EJ [ 0-1 1 ]± 0.50/11±2  
Resistivity: Min: 1E8 Max: 1.03E8 Ω·cm
Mobility: Min: 5613 Max: 6000 cm2/v.s
EPD: Min: 700 Max: 800 Max:
Thickness: 625±20 µm
Edge Rounding: 0.375 mmR
Laser Marking: N/A  
TTV: N/A µm
Surface Finish- front: Polished    
Surface Finish -back: Etched  
Epi-Ready:

Yes


 
 
Parameter Guaranteed / Actual Values UOM
Growth Method: VGF  
Conduct Type: S-I-N  
Dopant: Undoped  
Diameter: 100.0± 0.2 mm
Orientation: (100)± 0.30  
OF location/length: EJ [ 0-1-1]± 0.50/32.5±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/18±1  
Resistivity: Min: 1.5 E8 Max: 2.0 E8 Ω·cm
Mobility: Min: 4832 Max: 4979 cm2/v.s
EPD: Min: 600 Max: 700 / cm2
Thickness: 625± 25 µm
Edge Rounding: 0.375 mmR
TTV/TIR: Max: 3 µm
BOW: Max: 4 µm
Warp: Max: 5 µm
Partical  Count: <100/wafer(for particle>0.3um)  
Surface Finish- front: Polished    
Surface Finish -back: Polished  
Epi-Ready:

Yes

 
 
Parameter Customer's Requirements Guaranteed / Actual Values UOM
Growth Method: VGF VGF  
Conduct Type: S-C-P S-C-P  
Dopant: GaAs-Zn GaAs-Zn  
Diameter: 50.8± 0.4 50.8± 0.4 mm
Orientation: (100)± 0.50 (100)± 0.50  
OF location/length: EJ [ 0-1-1]± 0.50/16±1 EJ [ 0-1-1]± 0.50/16±1  
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1 EJ [ 0-1 1 ]± 0.50/7±1  
Ingot CC: Min: 1 E19 Max: 5 E19 Min: 1.4 E19 Max: 1.9 E19 /cm3
Resistivity: Min: N/A Max: N/A Min: N/A Max: N/A Ω·cm
Mobility: Min: N/A Max: N/A Min: N/A Max: N/A cm2/v.s
EPD: Max: 5000 Min: 600 Max: 700 / cm2
Thickness: 350±25 350±25 µm
Surface Finish- front: Polished   Polished    
Surface Finish -back: Etched Etched  
Epi-Ready:

Yes

Yes

 
Detailed Photos


GaAs (Gallium Arsenide) Wafer Substrate
GaAs (Gallium Arsenide) Wafer Substrate
GaAs (Gallium Arsenide) Wafer Substrate
GaAs (Gallium Arsenide) Wafer Substrate

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.

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