Single/Double Sided Polished Undoped Gallium Arsenide Wafer

• Usage: Optical
• Type: Flat Lens
• Transmittance: >95%
• Shape: Single-lens
• Material: Optical Glass
• Lenses Color: Clear
• Customized: Customized
• Size: Customized
• Thickness: Customized
• Growth Method: Ky
• Transport Package: Box
• Trademark: FineWin
• Origin: Jiaozuo City Henan Province
• Production Capacity: 60000 PCS/Month

Product Description

Single/Double Sided Polished Undoped Gallium Arsenide Wafer
What we can supply:

GaAs wafers: Monocrystal ingots:2-6inch
orientation: (100)(111)
Type: Ntype Doped silicon, P type, doped Zn, Si undoped

Product description

1. Detailed specification:

Parameter	Guaranteed / Actual Values		UOM
Growth Method:	VGF
Conduct Type:	S-I-N
Dopant:	Undoped
Diameter:	50.7± 0.1		mm
Orientation:	(100)± 0.5^0
OF location/length:	EJ [ 0-1-1]± 0.5^0/16±1
IF location/length:	EJ [ 0-1 1 ]± 0.5^0/7±1
Resistivity:	Min: 1.0 E8	Max: 2.2 E8	Ω·cm
Mobility:	Min: 4500	Max: 5482	cm^2/v.s
EPD:	Min: 700	Max: 800	/ cm^2
Thickness:	350± 20		µm
Edge Rounding:	0.25		mmR
Laser Marking:	N/A
TTV/TIR:	Max: 10		µm
BOW:	Max: 10		µm
Warp:	Max: 10		µm
Partical  Count:	<50/wafer(for particle>0.3um)
Surface Finish- front:	Polished
Surface Finish -back:	Etched
Epi-Ready:	Yes

 

Parameter	Guaranteed / Actual Values		UOM
Growth Method:	VGF
Conduct Type:	S-I-N
Dopant:	Undoped
Diameter:	76.2± 0.2		mm
Orientation:	(100) 0^0± 0.5^0
OF location/length:	EJ [ 0-1-1]± 0.5^0/22±2
IF location/length:	EJ [ 0-1 1 ]± 0.5^0/11±2
Resistivity:	Min: 1E8	Max: 1.03E8	Ω·cm
Mobility:	Min: 5613	Max: 6000	cm^2/v.s
EPD:	Min: 700	Max: 800	Max:
Thickness:	625±20		µm
Edge Rounding:	0.375		mmR
Laser Marking:	N/A
TTV:	N/A		µm
Surface Finish- front:	Polished
Surface Finish -back:	Etched
Epi-Ready:	Yes

 

Parameter	Guaranteed / Actual Values		UOM
Growth Method:	VGF
Conduct Type:	S-I-N
Dopant:	Undoped
Diameter:	100.0± 0.2		mm
Orientation:	(100)± 0.3^0
OF location/length:	EJ [ 0-1-1]± 0.5^0/32.5±1
IF location/length:	EJ [ 0-1 1 ]± 0.5^0/18±1
Resistivity:	Min: 1.5 E8	Max: 2.0 E8	Ω·cm
Mobility:	Min: 4832	Max: 4979	cm^2/v.s
EPD:	Min: 600	Max: 700	/ cm^2
Thickness:	625± 25		µm
Edge Rounding:	0.375		mmR
TTV/TIR:	Max: 3		µm
BOW:	Max: 4		µm
Warp:	Max: 5		µm
Partical  Count:	<100/wafer(for particle>0.3um)
Surface Finish- front:	Polished
Surface Finish -back:	Polished
Epi-Ready:	Yes

 

Parameter	Customer's Requirements		Guaranteed / Actual Values		UOM
Growth Method:	VGF		VGF
Conduct Type:	S-C-P		S-C-P
Dopant:	GaAs-Zn		GaAs-Zn
Diameter:	50.8± 0.4		50.8± 0.4		mm
Orientation:	(100)± 0.5^0		(100)± 0.5^0
OF location/length:	EJ [ 0-1-1]± 0.5^0/16±1		EJ [ 0-1-1]± 0.5^0/16±1
IF location/length:	EJ [ 0-1 1 ]± 0.5^0/7±1		EJ [ 0-1 1 ]± 0.5^0/7±1
Ingot CC:	Min: 1 E19	Max: 5 E19	Min: 1.4 E19	Max: 1.9 E19	/cm^3
Resistivity:	Min: N/A	Max: N/A	Min: N/A	Max: N/A	Ω·cm
Mobility:	Min: N/A	Max: N/A	Min: N/A	Max: N/A	cm^2/v.s
EPD:	Max: 5000		Min: 600	Max: 700	/ cm^2
Thickness:	350±25		350±25		µm
Surface Finish- front:	Polished		Polished
Surface Finish -back:	Etched		Etched
Epi-Ready:	Yes		Yes

Product Pictures:

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.

   (2) If you have your own express account, it's great.If not,we could help you ship them. 

 Q: How to pay?

A: T/T, Paypal, etc

Q: What's your MOQ?

A:  (1) For inventory, the MOQ is 5pcs.

   (2) For customized products, the MOQ is 10pcs-25pcs.

Q: What's the delivery time?

A:  (1) For the standard products

          For inventory: the delivery is 5 workdays after you place the order.

          For customized products: the delivery is 2 or 3 weeks after you place the order.

     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.